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Engineering high quality and conformal ultrathin SiNx films by PEALD for downscaled and advanced CMOS nodes

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 042401 (2021)
Date:
2021-04-20
DOI:
http://dx.doi.org/10.1116/6.0000821

Author Information

Name Institution
Antony Premkumar PeterIMEC
Takayama TomomiIMEC
Ebisudani TaishiIMEC
Shiba EiichiroIMEC
Alfonso SepulvedaIMEC
Timothee BlanquartIMEC
Yosuke KimuraIMEC
Sujith SubramanianIMEC
Sylvain BaudotIMEC
Briggs BasoeneIMEC
Anshul GuptaIMEC
Anabela VelosoIMEC
Elena CapogrecoIMEC
Hans MertensIMEC
Johan MeersschautIMEC
Thierry ConardIMEC
Praveen DaraIMEC
Jef GeypenIMEC
Gerardo MartinezIMEC
Dmitry BatukIMEC
Steven DemuynckIMEC
Pierre MorinIMEC

Films

Plasma SiNx

Hardware used: ASM Eagle XP8
Diiodosilane, H2I2Si
CAS#: 13760-02-6
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 500-550C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Uniformity
Analysis: Ellipsometry
Diagnostic: KLA-Tencor Aleris

Characteristic: Density
Analysis: Custom
Diagnostic: Custom

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Etch Rate
Analysis: Custom
Diagnostic: Custom

Characteristic: Stress
Analysis: Wafer Curvature
Diagnostic: -

Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet 6700

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Oxidation Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Helios 1200

Substrates

Si with native oxide
SiGe

Notes

1617