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Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

Type:
Journal
Info:
Applied Physics Letters 95, 162108 (2009)
Date:
2009-09-01
DOI:
http://dx.doi.org/10.1063/1.3251784

Author Information

Name Institution
Hu Young JeongKorea Advanced Institute of Science and Technology
Jeong Yong LeeKorea Advanced Institute of Science and Technology
Sung-Yool ChoiElectronics and Telecommunication Research Institute, (ETRI)
Jeong Won KimKorea Research Institute of Standards and Science (KRISS)

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
Deposition Temperature = 180C

Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Diagnostic: -

Substrates

Notes

1015