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Influence of oxidant source on the property of atomic layer deposited Al2O3 on hydrogen-terminated Si substrate

Type:
Journal
Info:
Thin Solid Films 476 (2005) 252-257
Date:
2004-09-16
DOI:
http://dx.doi.org/10.1016/j.tsf.2004.09.035

Author Information

Name Institution
Seung-Chul HaHynix Semiconductor
Eunsuk ChoiHynix Semiconductor
Soo-Hyun KimHynix Semiconductor
Jae-Sung RohHynix Semiconductor

Films

Thermal Al2O3

Hardware used: Joosung Engineering
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 350C

Thermal Al2O3

Hardware used: Joosung Engineering
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 350C

Plasma Al2O3

Hardware used: ASM Genitech PEALD
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL II

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Surface Science Instruments

Substrates

Silicon

Notes

186