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Plasma-Enhanced Atomic Layer Deposition of TiO2 and Al-Doped TiO2 Films Using N2O and O2 Reactants

Type:
Journal
Info:
Journal of The Electrochemical Society, 156 (9) G138-G143 (2009)
Date:
2009-06-05
DOI:
http://dx.doi.org/10.1149/1.3169516

Author Information

Name Institution
Gyu-Jin ChoiSeoul National University
Seong Keun KimSeoul National University
Seok-Jun WonSeoul National University
Hyeong Joon KimSeoul National University
Cheol Seong HwangSeoul National University

Films

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 250C

Plasma AlTixOy

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma AlTixOy

Hardware used: ASM Genitech PEALD
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Areal Density
Analysis: XRF, X-Ray Fluorescence
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

Ru

Notes

754