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Plasma-enhanced atomic layer deposition of low temperature silicon dioxide films using di-isopropylaminosilane as a precursor

Type:
Journal
Info:
Thin Solid Films 660 (2018) 572-577
Date:
2018-05-18
DOI:
https://doi.org/10.1016/j.tsf.2018.05.033

Author Information

Name Institution
Donghyuk ShinYonsei University
Heungseop SongYonsei University
Minhyeong LeeYonsei University
Heungsoo ParkYonsei University
Dae-Hong KoYonsei University

Films

Plasma SiO2

Hardware used: ASM Genitech PEALD
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam alpha-SE

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: CAMECA IMS 7F

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Chemical Binding
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Chemical Composition, Impurities
Analysis: HR-XPS, High Resolution X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Etch Rate
Analysis: Wet Etch
Diagnostic: -

Substrates

Silicon

Notes

1728