Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (10) G299-G301 (2006)
Date:
2006-06-01
DOI:
http://dx.doi.org/10.1149/1.2221770

Author Information

Name Institution
Sang-Hee Ko ParkElectronics and Telecommunication Research Institute, (ETRI)
Ho-Sang KwackElectronics and Telecommunication Research Institute, (ETRI)
Jin-Hong LeeElectronics and Telecommunication Research Institute, (ETRI)
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)
Hye-Yong ChuElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma ZnO

Hardware used: ASM Genitech PEALD
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 75-150C

Thermal ZnO

Hardware used: ASM Genitech PEALD
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Si(100)

Notes

1171