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A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition

Type:
Journal
Info:
Ceramics International 47 (2021) 34774-34782
Date:
2021-09-02

Author Information

Name Institution
Ju-Hwan HanHanyang University
Dong-Yeon KimHanyang University
Seung-Hwan LeeHanyang University
Hae Lin YangHanyang University
Byung Ho ParkEMNI Co., Ltd.
Jin-Seong ParkHanyang University

Films

Plasma SiO2




Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test

Substrates

Silicon
PEN, Polyethylene Napthalate

Notes

Used one of many available ISAC Research Inc. PEALD systems.
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