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Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 041508 (2017)
Date:
2017-05-25
DOI:
http://dx.doi.org/10.1116/1.4985140

Author Information

Name Institution
Young-Soo LeeHanyang University
Ju-Hwan HanHanyang University
Jin-Seong ParkHanyang University
Jozeph ParkKorea Advanced Institute of Science and Technology

Films

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Di(isopropylamino)Silane, (i-PrHN)2SiH2, DIPAS
CAS#: 908831-34-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 60-150C

Film/Plasma Properties

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Rigaku

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Em4sys NX-II

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Calcium Test
Diagnostic: Custom

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG Sigma Probe

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: ULVAC PHI Inc., PHI 700

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)
Glass

Notes

1095