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Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition

Type:
Journal
Info:
ICNNE 2016: International Conference on Nanoscience, Nanotachnology and Engineering
Date:
2016-09-29
DOI:
https://waset.org/abstracts/50360

Author Information

Name Institution
D. GeringswaldInfineon Technologies AG
B. HintzeQimonda

Films

Plasma TiN

Hardware used: Applied Materials TxZ chamber
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 310-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Discover

Characteristic: Microstructure
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-5200

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Tecnai G2 F20 S-Twin

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 670

Characteristic: Stress
Analysis: Stress Measurement
Diagnostic: E+H Metrology MX 208

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: KLA-Tencor RS100

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Substrates

Silicon

Notes

842