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Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S975~S979
Date:
2003-02-01
DOI:
http://dx.crossref.org/10.3938/jkps.42.975

Author Information

Name Institution
Seung-Woo ChoiGenitech Co., Ltd.
Choel-Min JangGenitech Co., Ltd.
Dae-Youn KimGenitech Co., Ltd.
Jeong-Seok HaGenitech Co., Ltd.
Hyoung-Sang ParkGenitech Co., Ltd.
Wonyong KohGenitech Co., Ltd.
Chun-Su LeeGenitech Co., Ltd.

Films

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiN

Hardware used: Custom
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Notes

190