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Plasma-Enabled ALD of Niobium Nitride Using an Organometallic Nb Precursor

Type:
Conference Proceedings
Info:
ECS Trans. 2010 volume 33, issue 2, 177-182
Date:
2010-10-12
DOI:
http://dx.doi.org/10.1149/1.3485254

Author Information

Name Institution
Eric W. DegunsCambridge NanoTech
Mark J. SowaCambridge NanoTech
Mark J. DalberthCambridge NanoTech
Ritwik BhatiaCambridge NanoTech
Ravi KanjoliaSAFC Hitech
Daniel MoserSAFC Hitech
Ganesh M. SundaramCambridge NanoTech
Jill S. BeckerCambridge NanoTech

Films

Plasma NbN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TBTDEN, Tris(diethylamido)(tert-butylimido)niobium
CAS#: 210363-27-2
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: TA Instruments Q500 with EGA furnace

Substrates

Silicon

Notes

Vapor pressure formula provided for the Nb precursor used.
System had Entegris gas purifiers on Ar, N2, and O2 gas lines.
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