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SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 116, 213502 (2020)
Date:
2020-05-20
DOI:
http://dx.doi.org/10.1063/5.0011192

Author Information

Name Institution
Yu-Lin HsuNational Chiao Tung University
Yao-Feng ChangUniversity of Texas at Austin
Wei-Min ChungNational Chiao Tung University
Ying-Chen ChenNorthern Arizona University
Chao-Cheng LinNational Applied Research Laboratories
Jihperng LeuNational Chiao Tung University

Films

Plasma SiCxNy

Hardware used: Custom Direct Capacitively Coupled Plasma
1,3,5-Trimethyl- 1,3,5-trivinylcyclotrisilazane
CAS#: 5505-72-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: n&k 1200

Characteristic: Refractive Index
Analysis: Reflectometry
Diagnostic: n&k 1200

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Perkin Elmer Spectrum 100

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo VG-Scientific theta probe

Substrates

Al

Notes

1548