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High aspect ratio iridescent three-dimensional metal-insulator-metal capacitors using atomic layer deposition

Type:
Journal
Info:
J. Vac. Sci. Technol. A 33(1), Jan/Feb 2015
Date:
2014-07-15
DOI:
http://dx.doi.org/10.1116/1.4891319

Author Information

Name Institution
Michael BurkeTyndall National Institute, University College Cork
Alan BlakeTyndall National Institute, University College Cork
Vladamir DjaraTyndall National Institute, University College Cork
Dan O'ConnellTyndall National Institute, University College Cork
Ian M. PoveyTyndall National Institute, University College Cork
Karim CherkaouiTyndall National Institute, University College Cork
Scott MonaghanTyndall National Institute, University College Cork
Jim ScullyTyndall National Institute, University College Cork
Richard MurphyTyndall National Institute, University College Cork
Paul K. HurleyTyndall National Institute, University College Cork
Martin E. PembleTyndall National Institute, University College Cork
Aidan J. QuinnTyndall National Institute, University College Cork

Films

Thermal Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: ESR, Equivalent Series Resistance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Quality Factor
Analysis: Q-V, Quality-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4156B Semiconductor Parameter Analyzer

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: JEOL 7500F

Substrates

Si(100)

Notes

30:1 trenches. TiN thinner at bottom.
TiN etched with Cl2 which is highly selective to Al2O3.
Via to bottom electrode etched with non-selective BCl3 process.
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