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Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Type:
Journal
Info:
Journal of Applied Physics 118, 045307 (2015)
Date:
2015-07-16
DOI:
http://dx.doi.org/10.1063/1.4927517

Author Information

Name Institution
Christopher J. BrennanMIT Lincoln Laboratory
Christopher M. NeumannMIT Lincoln Laboratory
Steven A. VitaleMIT Lincoln Laboratory

Films

Plasma TiN

Hardware used: Oxford Instruments OpAL
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 200-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: KLA UV1280

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XRF, X-Ray Fluorescence
Diagnostic: Oxford X-Strata 980

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

SiO2

Notes

380