About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Superconducting niobium titanium nitride thin films deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Supercond. Sci. Technol. 30 (2017) 095010
Date:
2017-06-30
DOI:
https://doi.org/10.1088/1361-6668/aa7ce3

Author Information

Name Institution
Yonas YemaneStanford University
Mark J. SowaCambridge NanoTech
Jinsong ZhangStanford University
Ling JuLehigh University
Eric W. DegunsCambridge NanoTech
Nicholas C. StrandwitzLehigh University
Fritz B. PrinzStanford University
J ProvineStanford University

Films

Plasma NbN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TBTDEN, Tris(diethylamido)(tert-butylimido)niobium
CAS#: 210363-27-2
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Plasma NbTiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TBTDEN, Tris(diethylamido)(tert-butylimido)niobium
CAS#: 210363-27-2
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: Horiba Jobin Yvon UVISEL

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Lucas Labs 302

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Superconductivity
Analysis: Four-point Probe
Diagnostic: Stanford Research Systems SR830

Characteristic: Magnetization
Analysis: Magnetization
Diagnostic: Quantum Design MPMS

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Empyrean

Substrates

Silicon
SiO2

Notes

1027