About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Flexible 3D Electrodes of Free-Standing TiN Nanotube Arrays Grown by Atomic Layer Deposition with a Ti Interlayer as an Adhesion Promoter

Type:
Journal
Info:
Nanomaterials 2020, 10, 409
Date:
2020-02-20
DOI:
http://dx.doi.org/10.3390/nano10030409

Author Information

Name Institution
Seokjung YunKorea Advanced Institute of Science and Technology
Sangjoon KimKorea Research Institute of Chemical Technology
Jaesung YounKorea Advanced Institute of Science and Technology
Hoon KimKorea Advanced Institute of Science and Technology
Jeongjae RyuKorea Advanced Institute of Science and Technology
Changdeuck BaeSungkyunkwan University
Kwangsoo NoKorea Advanced Institute of Science and Technology
Seungbum HongKorea Advanced Institute of Science and Technology

Films

Plasma TiN

Hardware used: Daeki Hi-Tech
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku D/Max-RC

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko Instruments SPA-300HV

Characteristic: Conductivity
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Seiko Instruments SPA-300HV

Substrates

AAO, Anodic Aluminum Oxide

Notes

1461