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Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 29, 021016 (2011)
Date:
2011-01-24
DOI:
http://dx.doi.org/10.1116/1.3554691

Author Information

Name Institution
Noémi LeickEindhoven University of Technology
R. O. F. VerkuijlenEindhoven University of Technology
Luca LamagnaNational Research Council (CNR - Italy)
E. LangereisEindhoven University of Technology
S. RushworthSAFC Hitech
Fred RoozeboomEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Ru

Hardware used: Oxford Instruments FlexAL
Cyclopentadienyl ethyl (dicarbonyl) Ruthenium, CpRu(CO)2Et
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 325C

Plasma Ru

Hardware used: Oxford Instruments FlexAL
Cyclopentadienyl ethyl (dicarbonyl) Ruthenium, CpRu(CO)2Et
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 325C

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 325C

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Philips X'Pert MPD Diffactometer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco Dimension 3100

Characteristic: Precursor Vapor Pressure
Analysis: -
Diagnostic: -

Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: ION TOF IV

Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai F30ST

Substrates

Si with native oxide
TiN
TEM Grid

Notes

Nice plot comparing vapor pressure of eight different Ru precursors.
680