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Fundamental beam studies of radical enhanced atomic layer deposition of TiN

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 21, 96-105 (2003)
Date:
2002-09-30
DOI:
http://dx.doi.org/10.1116/1.1524145

Author Information

Name Institution
Frank GreerUniversity of California - Berkeley
D. FraserUniversity of California - Berkeley
J. W. CoburnUniversity of California - Berkeley
David B. GravesUniversity of California - Berkeley

Films

Plasma TiN

Hardware used: Custom Remote Inductively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
D2, Deuterium
CAS#: 7782-39-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 25-137C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Surface Reactions
Analysis: QCM, Quartz Crystal Microbalance
Diagnostic: -

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: -

Substrates

Silicon

Notes

1226