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High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Type:
Journal
Info:
Applied Physics Letters 90, 102101 (2007)
Date:
2007-01-17
DOI:
http://dx.doi.org/10.1063/1.2643085

Author Information

Name Institution
Raghavasimhan SreenivasanStanford University
Takuya SugawaraStanford University
Krishna C. SaraswatStanford University
Paul C. McIntyreStanford University

Films

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
Isopropylimido Tris(Ethylmethylamido) Tantalum
CAS#: 0-0-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 200-450C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: HAADF, High-Angle Annular Dark Field
Diagnostic: FEI Titan S 80-300 TEM/STEM

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Substrates

SiO2

Notes

1472