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Fabrication of self-aligned TFTs with a ultra-low temperature polycrystalline silicon process on metal foils

Type:
Journal
Info:
Solid-State Electronics 54 (2010) 1326 - 1331
Date:
2010-05-16
DOI:
http://dx.doi.org/10.1016/j.sse.2010.05.021

Author Information

Name Institution
Jaehyun MoonElectronics and Telecommunication Research Institute, (ETRI)
Yong-Hae KimElectronics and Telecommunication Research Institute, (ETRI)
Dong-Jin ParkElectronics and Telecommunication Research Institute, (ETRI)
Choong-Heui ChungElectronics and Telecommunication Research Institute, (ETRI)
Seung-Youl KangElectronics and Telecommunication Research Institute, (ETRI)
Jin Ho LeeElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL JEM 1300S

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

SiO2

Notes

703