About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films

Type:
Journal
Info:
Surface & Coatings Technology 324 (2017) 243-248
Date:
2017-05-29

Author Information

Name Institution
Yunfei WangAjou University
Andre RicardUniversité de Toulouse
Jean-Philippe SarretteUniversité de Toulouse
Ansoon KimKorea Research Institute of Standards and Science (KRISS)
Yu Kwon KimAjou University

Films

Thermal TiO2

Hardware used: Custom


CAS#: 7732-18-5

Other TiON

Hardware used: Custom


CAS#: 7732-18-5

CAS#: 7727-37-9

Other TiON

Hardware used: Custom


CAS#: 7732-18-5

CAS#: 7727-37-9

CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Si(111)

Notes

1651