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In situ control of oxygen vacancies in TiO2 by atomic layer deposition for resistive switching devices

Type:
Journal
Info:
Nanotechnology 24 (2013) 295202
Date:
2013-04-19
DOI:
http://dx.doi.org/10.1088/0957-4484/24/29/295202

Author Information

Name Institution
Sang-Joon ParkKorea Research Institute of Standards and Science (KRISS)
Jeong-Pyo LeeKorea Research Institute of Standards and Science (KRISS)
Jong Shik JangKorea Research Institute of Standards and Science (KRISS)
Hyun RhuKorea Research Institute of Standards and Science (KRISS)
Hyunung YuKorea Research Institute of Standards and Science (KRISS)
Byung Youn YouKorea Research Institute of Standards and Science (KRISS)
Chang Soo KimKorea Research Institute of Standards and Science (KRISS)
Kyung Joong KimKorea Research Institute of Standards and Science (KRISS)
Young Joon ChoKorea Research Institute of Standards and Science (KRISS)
Sunggi BaikPohang University of Science and Technology (POSTECH)
Woo LeeKorea Research Institute of Standards and Science (KRISS)

Films

Plasma TiO2

Hardware used: CN1 Atomic Premium
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma TiO2

Hardware used: CN1 Atomic Premium
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Tecnai G2 F30

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku RU 200B

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Conformal Raman Spectroscopy
Diagnostic: Custom

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Keithley 4200-SCS

Substrates

Si(001)
Pt

Notes

623