About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

A controlled growth of WNx and WCx thin films prepared by atomic layer deposition

Type:
Journal
Info:
Materials Letters, Volume 168, Pages 218 - 222
Date:
2016-01-16
DOI:
http://dx.doi.org/10.1016/j.matlet.2016.01.071

Author Information

Name Institution
Jun Beom KimYeungnam University
Byeonghyeon JangYeungnam University
Hyun-Jung LeeYeungnam University
Won Seok HanUP Chemical
Do-Joong LeeBrown University
Han-Bo-Ram LeeIncheon National University
Tae Eun HongKorean Basic Science Institute
Soo-Hyun KimYeungnam University

Films

Plasma WN

Hardware used: Custom
tris(3-hexyne)tungsten(0) carbonyl
CAS#: 12131-66-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Plasma WC

Hardware used: Custom
tris(3-hexyne)tungsten(0) carbonyl
CAS#: 12131-66-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: FEI Technai F20

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific ESCA LAB 250 XPS Spectrometer

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: CAMECA IMS 6F

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Substrates

SiO2

Notes

620