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Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

Type:
Journal
Info:
IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 1, NO. 11, NOVEMBER 2011
Date:
2011-10-20
DOI:
http://dx.doi.org/10.1109/TCPMT.2011.2167969

Author Information

Name Institution
Mohamed SaadaouiDelft University of Technology
Henk van ZeijlDelft University of Technology
Wilhelmus H. A. WienDelft University of Technology
Hoa T. M. PhamDelft University of Technology
Cees KwakernaakDelft University of Technology
Harm C. M. KnoopsEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Frans C. VoogtNXP Semiconductors Research
Fred RoozeboomNXP Semiconductors Research
Pasqualina M. SarroDelft University of Technology

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Uniformity
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: -

Characteristic: Wetting Angle
Analysis: Contact Angle Measurement
Diagnostic: -

Substrates

Silicon

Notes

1444