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Atomic layer deposited nanocrystalline tungsten carbides thin films as a metal gate and diffusion barrier for Cu metallization

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 34, 041504 (2016)
Date:
2016-05-09
DOI:
http://dx.doi.org/10.1116/1.4951691

Author Information

Name Institution
Jun Beom KimYeungnam University
Soo-Hyun KimYeungnam University
Won Seok HanUP Chemical
Do-Joong LeeBrown University

Films

Plasma WC

Hardware used: NCD Technology Lucida MP-100
tris(3-hexyne)tungsten(0) carbonyl
CAS#: 12131-66-7
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: FEI Technai F20

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Characteristic: Work Function
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Custom
Diagnostic: Custom

Substrates

SiO2

Notes

843