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Preparation of TiN films by plasma assisted atomic layer deposition for copper metallization

Type:
Journal
Info:
Materials Science and Engineering C 24 (2004) 289-291
Date:
2003-10-27
DOI:
https://doi.org/10.1016/j.msec.2003.09.062

Author Information

Name Institution
Do-Heyoung KimChonnam National University
Young Jae KimChonnam National University
Jun-Hyung ParkChonnam National University
Jin Hyeok KimChonnam National University

Films

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 175C

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 175C

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 175C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Substrates

SiO2

Notes

1240