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The Growth of Tantalum Thin Films by Plasma-Enhanced Atomic Layer Deposition and Diffusion Barrier Properties

Type:
Journal
Info:
Mat. Res. Soc. Symp. Proc. Vol. 716
Date:
2002-01-01
DOI:
http://dx.doi.org/10.1557/PROC-716-B8.5

Author Information

Name Institution
Hyungjun KimIBM
C. CabralIBM
C. LavoieIBM
S. M. RossnagelIBM

Films

Plasma Ta

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 300C

Plasma TaNx

Hardware used: Custom Remote Inductively Coupled Plasma
TaCl5, Tantalum Pentachloride
CAS#: 7721-01-9
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: Synchrotron

Substrates

Silicon

Notes

1231