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Atomic Layer Deposition Niobium Nitride Films for High-Q Resonators

Type:
Journal
Info:
Journal of Low Temperature Physics volume 199, pages 875-882 (2020)
Date:
2020-01-13
DOI:
http://dx.doi.org/10.1007/s10909-020-02336-2

Author Information

Name Institution
Calder SheagrenUniversity of Chicago
Peter S. BarryArgonne National Laboratory
Erik ShirokoffUniversity of Chicago
Qing Yang TangUniversity of Chicago

Films

Plasma NbN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TBTDEN, Tris(diethylamido)(tert-butylimido)niobium
CAS#: 210363-27-2
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 250-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker AXS ICON

Characteristic: Resistivity, Sheet Resistance
Analysis: Custom
Diagnostic: -

Characteristic: Superconductivity
Analysis: Custom
Diagnostic: -

Characteristic: Quality Factor
Analysis: Custom
Diagnostic: -

Characteristic: Kinetic Inductance
Analysis: Custom
Diagnostic: -

Substrates

Si(100)

Notes

1560