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Remote plasma enhanced atomic layer deposition of TiN thin films using metalorganic precursor

Type:
Journal
Info:
J. Vac. Sci. Technol. A 22(1), Jan/Feb 2004
Date:
2004-01-01
DOI:
http://dx.doi.org/10.1116/1.1624285

Author Information

Name Institution
Ju Youn KimHanyang University
Sangwon SeoHanyang University
Do Youl KimHanyang University
Hyeongtag JeonHanyang University
Yangdo KimPusan National University

Films

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 175-350C

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 175-350C

Plasma TiN

Hardware used: Custom
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 175-350C

Film/Plasma Properties

Characteristic: Diffusion Barrier Properties
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Thickness
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

SiO2 cleaned with pirahna solution for organics removal
N2 plasma films better than H2 or N2/H2 plasma films
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