About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Fully CMOS-compatible titanium nitride nanoantennas

Type:
Journal
Info:
Applied Physics Letters 108, 051110 (2016)
Date:
2016-01-24

Author Information

Name Institution
Justin A. BriggsStanford University
Gururaj V. NaikStanford University
Trevor A. PetachStanford University
Brian K. BaumStanford University
David Goldhaber-GordonStanford University
Jennifer A. DionneStanford University

Films


Film/Plasma Properties

Characteristic: Optical Properties
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance

Characteristic: Resistivity, Sheet Resistance
Analysis: van der Pauw sheet resistance

Substrates

MgO

Notes

Good information in supplement.
763