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Atomic layer deposition of TiN for the fabrication of nanomechanical resonators

Type:
Journal
Info:
J. Vac. Sci. Technol. A 32(2), Mar/Apr 2012, 021503
Date:
2013-03-01
DOI:
http://dx.doi.org/10.116/1.4790132

Author Information

Name Institution
Nathan Nelson-FitzpatrickUniversity of Alberta
Csaba GuthyUniversity of Alberta
Somayyeh PoshtibanUniversity of Alberta
Eric FinleyNational Institute for Nanotechnology, Alberta, Canada
Kenneth D. HarrisNational Institute for Nanotechnology, Alberta, Canada
Brian J. WorfolkUniversity of Alberta
Stephane EvoyUniversity of Alberta

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 120-300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: Filmetrics F-50

Characteristic: Film Stress
Analysis: Interferometry
Diagnostic: Flexus 2320 Thin Film Stress Measurement System

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Discover

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Analytical Axis Ultra DLD

Substrates

Si(100)

Notes

Pirahna clean
14