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Atomic layer deposition of titanium nitride for quantum circuits

Type:
Journal
Info:
Appl. Phys. Lett. 113, 212601 (2018)
Date:
2018-10-01
DOI:
http://dx.doi.org/10.1063/1.5053461

Author Information

Name Institution
Abigail ShearrowUniversity of Chicago
Gerwin KoolstraUniversity of Chicago
Samuel J. WhiteleyUniversity of Chicago
Nathan EarnestUniversity of Chicago
Peter S. BarryUniversity of Chicago
F. Joseph HeremansArgonne National Laboratory
David D. AwschalomUniversity of Chicago
Erik ShirokoffUniversity of Chicago
David I. SchusterUniversity of Chicago

Films

Plasma TiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Critical Temperature
Analysis: Four-point Probe
Diagnostic: Quantum Design PPMS

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Quantum Design PPMS

Characteristic: Sheet Inductance
Analysis: Four-point Probe
Diagnostic: Quantum Design PPMS

Characteristic: Compositional Depth Profiling
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D2 Phaser XE-T

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Substrates

Si(111)

Notes

830