About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Plasma-enhanced atomic layer deposition of TiCx films using tetrakis neopentyl titanium and applications to a diffusion barrier and contact material

Type:
Presentation
Info:
ALD 2012 Talk
Date:
2012-06-18
DOI:
No DOI

Author Information

Name Institution
Sang-Kyung ChoiYeungnam University
Soo-Hyun KimYeungnam University
Taehoon CheonDaegu Gyeongbuk Institute of Science & Technology

Films

Plasma TiC

Hardware used: NCD Technology Lucida MP-100
Tetrakis (neopentyl) Titanium, ((CH3)3CCH2)4Ti
CAS#: 36945-13-8
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma TiN

Hardware used: NCD Technology Lucida MP-100
Tetrakis (neopentyl) Titanium, ((CH3)3CCH2)4Ti
CAS#: 36945-13-8
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: -
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Diffusion Barrier Properties
Analysis: Anneal
Diagnostic: -

Substrates

Silicon

Notes

Samples annealed 700-1000C, 5e-6Torr, 30min.
90