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Gadolinium nitride films deposited using a PEALD based process

Type:
Journal
Info:
Journal of Crystal Growth Volume 338, Issue 1, 1 January 2012, Pages 111-117
Date:
2011-10-28
DOI:
http://dx.doi.org/10.1016/j.jcrysgro.2011.10.049

Author Information

Name Institution
Ziwen FangUniversity of Liverpool
Paul A. WilliamsSAFC Hitech
Rajesh OdedraSAFC Hitech
Hyeongtag JeonHanyang University
Richard PotterUniversity of Liverpool

Films

Plasma GdN

Hardware used: Oxford Instruments OpAL
tris(methylcyclopentadienyl)gadolinium Gd(MeCp)3
CAS#: 39470-11-6
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range N/A

Plasma GdN

Hardware used: Oxford Instruments OpAL
tris(methylcyclopentadienyl)gadolinium Gd(MeCp)3
CAS#: 39470-11-6
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Plasma GdN

Hardware used: Oxford Instruments OpAL
tris(methylcyclopentadienyl)gadolinium Gd(MeCp)3
CAS#: 39470-11-6
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL IV

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: Oxford Instruments Inca X-act model 51 EDX detector

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 680 FEAES

Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku Miniflex Diffractometer

Substrates

Si with native oxide

Notes

H2 plasma pump/purge cycle used to remove O2 from system prior to GdN deposition.
TaN capped GdN to prevent oxidation.
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