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Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications

Type:
Journal
Info:
Mater. Res. Soc. Symp. Proc. Vol. 863
Date:
2005-06-01
DOI:
http://dx.doi.org/10.1557/PROC-863-B6.4

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
Fred RoozeboomPhilips
A. KemmerenPhilips
N. P. PhamDelft University of Technology
Pasqualina M. SarroDelft University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN

Hardware used: Custom Remote Inductively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

1257