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Microwave properties of superconducting atomic-layer deposited TiN films

Type:
Journal
Info:
IEEE Transactions on Applied Superconductivity, (Volume:23, Issue:3)
Date:
2012-12-27
DOI:
http://dx.doi.org/10.1109/TASC.2012.2236603

Author Information

Name Institution
P. C. J. J. CoumouDelft University of Technology
M. R. ZuiddamDelft University of Technology
E. F. C. DriessenDelft University of Technology
P. J. de VisserDelft University of Technology
J. J. A. BaselmansSRON National Institute for Space Research
T. M. KlapwijkDelft University of Technology

Films

Plasma TiN

Hardware used: Oxford Instruments FlexAL
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: -

Characteristic: Critical Temperature
Analysis: Hall Bar Structures
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Bar Structures
Diagnostic: -

Characteristic: Hall Voltage
Analysis: Hall Bar Structures
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: Hall Bar Structures
Diagnostic: -

Characteristic: Microwave Properties
Analysis: Quarter Wave Resonators
Diagnostic: -

Substrates

Si with native oxide

Notes

Available with additional TEM analysis in Coumou Thesis.
146