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Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

Type:
Journal
Info:
Journal of The Electrochemical Society, 153 (11) G956-G965 (2006)
Date:
2006-06-06
DOI:
http://dx.doi.org/10.1149/1.2344843

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
E. LangereisEindhoven University of Technology
Fred RoozeboomPhilips
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN

Hardware used: Custom Remote Inductively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 100-400C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Resistivity, Sheet Resistance
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000U

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: Bruker D8 Advance

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Signatone

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Ocean Optics USB 2000

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Keithley 2400 Source Meter

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Keithley 2400 Source Meter

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: NT-MDT Solver P47SPM

Substrates

Si with native oxide

Notes

1313