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Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 57, No. 4, pp. 806--811
Date:
2010-07-29
DOI:
https://inis.iaea.org/search/search.aspx?orig_q=RN:44096233

Author Information

Name Institution
Jung-Dae KwonKorea Institute of Materials Science
Jin-Seong ParkDankook University

Films

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Instruments 200

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

SiO2

Notes

725