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Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity

Type:
Journal
Info:
Thin Solid Films 694 (2020) 137752
Date:
2019-12-11
DOI:
https://doi.org/10.1016/j.tsf.2019.137752

Author Information

Name Institution
Eun-Jin SongKorea Institute of Materials Science
Hyunjin JoKorea Institute of Materials Science
Se-Hun KwonPusan National University
Ji-Hoon AhnHanyang University
Jung-Dae KwonKorea Institute of Materials Science

Films

Plasma TiON

Hardware used: iOV d150, iSAC Co. Ltd.
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
H2, Hydrogen
CAS#: 1333-74-0
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 200C

Plasma TiO2

Hardware used: iOV d150, iSAC Co. Ltd.
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
O2, Oxygen
CAS#: 7782-44-7
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Nanoview MG-1000

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: KLA-Tencor P-11

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MPD X-ray Diffractometer

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: Mitsubishi Chemical Co. MCP-T600

Characteristic: Flat Band Voltage
Analysis: CV, Cyclic Voltammetry
Diagnostic: MSTECH M5VC

Characteristic: Interface Trap Density
Analysis: CV, Cyclic Voltammetry
Diagnostic: MSTECH M5VC

Characteristic: Hysteresis
Analysis: CV, Cyclic Voltammetry
Diagnostic: MSTECH M5VC

Characteristic: Lifetime
Analysis: MDP, Microwave Detected Photoconductivity
Diagnostic: MDPmap, Freiberg Instruments GmbH

Substrates

Si(100)

Notes

1532