About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

The effects of plasma treatment on the thermal stability of HfO2 thin films

Type:
Journal
Info:
Applied Surface Science 254 (2008) 6116 - 6118
Date:
2008-02-01
DOI:
https://doi.org/10.1016/j.apsusc.2008.02.140

Author Information

Name Institution
Kow-Ming ChangNational Chiao Tung University
Bwo-Ning ChenNational Chiao Tung University
Shih-Ming HuangNational Chiao Tung University

Films

Other HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range N/A

Other HfO2

Hardware used: Custom Remote Inductively Coupled Plasma
N2O, Nitrous Oxide
CAS#: 10024-97-2
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Notes

Thermal HfO2 films subjected to N2 or N2O plasmas to change dielectric properties.
1348