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Light-induced activation and deactivation of bulk defects in boron-doped float-zone silicon

Type:
Journal
Info:
Journal of Applied Physics 121, 185702 (2017)
Date:
2017-04-23
DOI:
http://dx.doi.org/10.1063/1.4983024

Author Information

Name Institution
Tim NieweltFraunhofer Institute for Solar Energy Systems (ISE)
Marisa SelingerFraunhofer Institute for Solar Energy Systems (ISE)
N. E. GrantUniversity of Warwick
Wolfram KwapilFraunhofer Institute for Solar Energy Systems (ISE)
J. D. MurphyUniversity of Warwick
Martin C. SchubertFraunhofer Institute for Solar Energy Systems (ISE)

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 230C

Film/Plasma Properties

Substrates

Silicon

Notes

1029