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Impact of the firing step on Al2O3 passivation on p-type Czochralski Si wafers: Electrical and chemical approaches

Type:
Journal
Info:
Japanese Journal of Applied Physics 54, 08KD21 (2015)
Date:
2015-05-19
DOI:
http://dx.doi.org/10.7567/JJAP.54.08KD21

Author Information

Name Institution
Matthieu PawlikUniversité Lille
Jean-Pierre VilcotUniversité Lille
Mathieu HalbwaxUniversité Lille
Michel GauthierPhotowatt
Nam Le QuangPhotowatt

Films

Plasma Al2O3

Hardware used: Beneq TFS-200
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker Dimension ICON

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Diagnostic: -

Characteristic: Photoconductance
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Notes

364