Inductively coupled plasma sources from Plasma ALD, LLC.


Ideal for plasma enhanced atomic layer deposition and other surface engineering applications.


Contact us for more information.

Atomic layer deposited Al2O3 capping layer effect on environmentally assisted cracking in SiNx barrier films

Type:
Journal
Info:
Journal of Applied Physics 125, 045301 (2019)
Date:
2018-12-30
DOI:
http://dx.doi.org/10.1063/1.5061780

Author Information

Name Institution
Kyungjin KimGeorgia Institute of Technology
Olivier N PierronGeorgia Institute of Technology
Samuel GrahamGeorgia Institute of Technology

Films

Plasma Al2O3

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Substrates

Si3N4

Notes

1503