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Dimethylaluminum hydride for atomic layer deposition of Al2O3 passivation for amorphous InGaZnO thin-film transistors

Type:
Journal
Info:
2018 Appl. Phys. Express 11 061103
Date:
2018-04-20

Author Information

Name Institution
Dianne C. CorsinoNara Institute of Science and Technology
Juan Paolo S. BermundoNara Institute of Science and Technology
Mami N. FujiiNara Institute of Science and Technology
Kiyoshi TakahashiNippon Aluminum Alkyls, Ltd.
Yasuaki IshikawaNara Institute of Science and Technology
Yukiharu UraokaNara Institute of Science and Technology

Films

Plasma Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Substrates

IGZO

Notes

1726