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Normally-off AlGaN/GaN recessed MOS-HEMTs on normally-on epitaxial structures for microwave power applications

Type:
Conference Proceedings
Info:
2016 11th European Microwave Integrated Circuits Conference (EuMIC)
Date:
2016-10-03
DOI:
http://dx.doi.org/10.1109/EuMIC.2016.7777490

Author Information

Name Institution
L. Trinh XuanIII-V Lab
R. AubryIII-V Lab
N. MichelIII-V Lab
O. PatardIII-V Lab
J.-C. JacquetIII-V Lab
S. PiotrowiczIII-V Lab
M. OualliIII-V Lab
P. GamarraIII-V Lab
C. PotierIII-V Lab
D. LancereauIII-V Lab
S. L. DelageIII-V Lab
S. LaurentUniversity of Limoges
P. BouysseUniversity of Limoges
R. QuéréUniversity of Limoges

Films

Plasma Al2O3

Hardware used: Unknown
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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