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Atomic Layer Engineering of Er-Ion Distribution in Highly Doped Er:Al2O3 for Photoluminescence Enhancement

Type:
Journal
Info:
ACS Photonics, 2016, 3 (11), pp 2040-2048
Date:
2016-09-09
DOI:
http://dx.doi.org/10.1021/acsphotonics.6b00283

Author Information

Name Institution
John RönnAalto University
Lasse KarvonenAalto University
Christoffer KauppinenAalto University
Alexander Pyymaki PerrosAalto University
Nasser PeyghambarianUniversity of Arizona
Harri LipsanenAalto University
Antti SäynätjokiAalto University
Zhipei SunAalto University

Films

Other Er:Al2O3

Hardware used: Picosun R200
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
O2, Oxygen
CAS#: 7782-44-7
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 300C

Plasma Er2O3

Hardware used: Picosun R200
Er(TMHD)3, Er(THD)3, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) erbium, Erbium dipivaloylmethanate
CAS#: 35733-23-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 260-325C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Diagnostic: FEI Helios Nanolab600

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Diagnostic: Custom

Substrates

Silicon

Notes

847