About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors

Type:
Journal
Info:
Nanoscale 2015, Volume 110, Issue , pp 59 - 64
Date:
2015-03-30

Author Information

Name Institution
Jörg SchulzeUniversitat Stuttgart
Andreas BlechUniversitat Stuttgart
Arnab DattaUniversitat Stuttgart
Inga Anita FischerUniversitat Stuttgart
D. HaehnelUniversitat Stuttgart
Sandra NaaszUniversitat Stuttgart
Erlend RolsethUniversitat Stuttgart
Eva-Maria TropperUniversitat Stuttgart

Films

Plasma Al2O3


Film/Plasma Properties

Substrates

Notes

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