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Plasma-enhanced atomic layer deposition of barium titanate with aluminum incorporation

Type:
Journal
Info:
Acta Materialia 117 (2016) 153 - 159
Date:
2016-07-06
DOI:
http://dx.doi.org/10.1016/j.actamat.2016.07.018

Author Information

Name Institution
Yongmin KimStanford University
Peter SchindlerStanford University
Anup L. DadlaniStanford University
Shinjita AcharyaStanford University
J ProvineStanford University
Jihwan AnStanford University
Fritz B. PrinzStanford University

Films

Plasma BaO

Hardware used: Custom
Bis(n-propyl tetramethyl cyclopentadienyl) barium, Ba[(n-Pr)(Me)4Cp]2
CAS#: 210758-43-3
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma TiO2

Hardware used: Custom
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma BaTiO3

Hardware used: Custom
Bis(n-propyl tetramethyl cyclopentadienyl) barium, Ba[(n-Pr)(Me)4Cp]2
CAS#: 210758-43-3
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma Al:BaTiO3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Bis(n-propyl tetramethyl cyclopentadienyl) barium, Ba[(n-Pr)(Me)4Cp]2
CAS#: 210758-43-3
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma ZrTiN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: -
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: -
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Notes

961