Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers
Type:
Journal
Info:
J. Phys. D: Appl. Phys. 47 455304 2014
Date:
2014-09-29
Author Information
| Name | Institution |
|---|---|
| Ying Xiong | University of Electronic Science and Technology of China |
| Qi-Ye Wen | University of Electronic Science and Technology of China |
| Zhi Chen | University of Electronic Science and Technology of China |
| Wei Tian | University of Electronic Science and Technology of China |
| Tian-Long Wen | University of Electronic Science and Technology of China |
| Yu-Lan Jing | University of Electronic Science and Technology of China |
| Qing-Hui Yang | University of Electronic Science and Technology of China |
| Huai-Wu Zhang | University of Electronic Science and Technology of China |
Films
Film/Plasma Properties
Substrates
| Si(100) |
Notes
| PEALD Al2O3 as buffer layer for VO2 sputter deposition. |
| 297 |