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Tuning the phase transitions of VO₂ thin films on silicon substrates using ultrathin Al₂O₃ as buffer layers

Type:

Journal

Info:

J. Phys. D: Appl. Phys. 47 455304 2014

Date:

2014-09-29

DOI:

http://dx.doi.org/10.1088/0022-3727/47/45/455304

Author Information

Name	Institution
Ying Xiong	University of Electronic Science and Technology of China
Qi-Ye Wen	University of Electronic Science and Technology of China
Zhi Chen	University of Electronic Science and Technology of China
Wei Tian	University of Electronic Science and Technology of China
Tian-Long Wen	University of Electronic Science and Technology of China
Yu-Lan Jing	University of Electronic Science and Technology of China
Qing-Hui Yang	University of Electronic Science and Technology of China
Huai-Wu Zhang	University of Electronic Science and Technology of China

Films

Plasma Al₂O₃

Hardware used: Unknown

TMA, Trimethylaluminum, Trimethylalumane, AlMe₃, Al(CH₃)₃

CAS#: 75-24-1

CAS#: 7782-44-7

Deposition Temperature = 120C

Film/Plasma Properties

Substrates

Si(100)

Notes

PEALD Al₂O₃ as buffer layer for VO₂ sputter deposition.
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