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Plasma enhanced atomic layer deposition of Al2O3 gate dielectric thin films on AlGaN/GaN substrates: The role of surface predeposition treatments

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 35, 01B140 (2017)
Date:
2016-12-02
DOI:
http://dx.doi.org/10.1116/1.4972257

Author Information

Name Institution
Emanuela SchiliròUniversità di Catania
Patrick FiorenzaNational Research Council (CNR - Italy)
Giuseppe GrecoNational Research Council (CNR - Italy)
Fabrizio RoccaforteNational Research Council (CNR - Italy)
Raffaella Lo NigroNational Research Council (CNR - Italy)

Films

Plasma Al2O3

Hardware used: SENTECH
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2010F

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Park Systems, XE-150

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

AlGaN

Notes

889